| PART |
Description |
Maker |
| EM484M1644VTC-6F EM481M1644VTC-6FE EM482M1644VTC-6 |
64Mb (1M×4Bank×16) Synchronous DRAM
64Mb (1M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
| HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| H57V2582GTR |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| H57V2582GTR-60I H57V2582GTR-60J H57V2582GTR-75I H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| H57V1262GFR-50X H57V1262GFR-60X H57V1262GFR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| H57V1262GFR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HSD8M32F4V-10 HSD8M32F4V-10L HSD8M32F4V-12 HSD8M32 |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD16M64D8A HSD16M64D8A-10 HSD16M64D8A-10L HSD16M6 |
Synchronous DRAM Module 128Mbyte (16Mx64bit),DIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD16M32F4VP-10L HSD16M32F4VP |
Synchronous DRAM Module, 64Mbyte ( 16M x 32-Bit ) SMM based on 2Mx16Bitx4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|
